FinFET reliability study by forward gated-diode generation-recombination current

Semiconductor Science and Technology

Volumn 23, Issue 7, 2008, Pages

  Ma, Chenyue ^a   Li, Bo ^a   Wei, Yiqun ^a   Zhang, Lining ^a   He, Jin ^a   Zhang, Xing ^a   Lin, Xinnan ^a   Chan, Mansun ^b  

^a PEKING UNIVERSITY   (China)

^b HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENT MEASUREMENT; FIELD EFFECT TRANSISTORS; PARAMETER EXTRACTION;

CURRENT VOLTAGE (I V) CHARACTERISTICS; FINFETS; GATED DIODES; GENERATION RECOMBINATION; INTERFACE STATES; MATHEMATICAL ALGORITHMS; OXIDE TRAPS; STRESS-INDUCED;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 47749102121     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/23/7/075008     Document Type: Article

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