Application of forward gated-diode R-G current method in extracting F-N stress-induced interface traps in SOI NMOSFETs

Microelectronics Reliability

Volumn 42, Issue 1, 2002, Pages 145-148

  Zhang, Jin He Xing ^a   Huang, Ru ^a   Wang, Yang Yuan ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TRAPS; GATES (TRANSISTOR); SILICON ON INSULATOR TECHNOLOGY; STRESS ANALYSIS;

TRAP DENSITY;

MOSFET DEVICES;

EID: 0036133326     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(01)00122-6     Document Type: Article

References (4)

1. Carrier lifetime extraction in fully-depleted dual-gate SOI devices
2. Numerical analysis of characterized interface traps of the SOI devices by R-G current
3. Gated-diode R-G current: A sensitive tool for characterizing the bulk traps of SOI devices
4. Hot-electron-induced MOSFET degradation-model, monitor and improvement