FinFET and MOSFET preliminary comparison of gate oxide reliability

Microelectronics Reliability

Volumn 46, Issue 9-11, 2006, Pages 1608-1611

  Fernandez R ^a   Rodriguez R ^a   Nafria M ^a   Aymerich, X ^a   Kaczer, B ^a   Groeseneken, G ^a  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

MOSFET DEVICES; OXIDE SUPERCONDUCTORS; RELIABILITY;

GATE OXIDE RELIABILITY; OXIDE WEAR;

GATES (TRANSISTOR);

EID: 33747809261     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2006.07.043     Document Type: Article

References (6)

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3. Cester A, Cimino S, Paccagnella A,Ghidini G, Guegan G. Collapse of MOSFET drain current after soft breakdown and its dependence on the transistor aspect ratio W/L. Proc IRPS 2003. p. 189-95.
4. Kaczer B, De Keersgieter A, Mahmood S, Degraeve R, Groeseneken G. Impact of gate-oxide breakdown of varying hardness on narrow and wide nFET's. IRPS Proc 2004. p. 79-83.
5. Fernández R., Rodríguez R., Nafría M., and Aymerich X. DC BD MOSFET model for circuit reliability simulation. Electronic Letters 41 6 (2005) 368-370
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