New method for extraction of MOSFET parameters

IEEE Electron Device Letters

Volumn 22, Issue 12, 2001, Pages 597-599

  He, Jin ^b   Zhang, Xing ^a,b   Wang, Yangyuan ^a,b   Huang, Ru ^a,b  

^a IEEE

^b PEKING UNIVERSITY   (China)

Author keywords

Field effect transistor; Modeling; Parameter extraction; Semiconductor devices

Indexed keywords

CARRIER MOBILITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENTS; GATES (TRANSISTOR); PARAMETER ESTIMATION; THRESHOLD VOLTAGE;

MOBILITY ATTENUATION COEFFICIENTS;

MOSFET DEVICES;

EID: 0035694271     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.974590     Document Type: Article

References (9)

1. Measurement of MOSFET constants
2. A parametric short channel MOS transistor model for subthreshold and strong inversion currents
3. Comparison of MOSFET threshold voltage extraction methods
4. Experimental determination of short channel MOSFET parameters
5. Measurement of threshold voltage and channel length of submicron MOSFET's
6. Method for extracting deep submicrometer MOSFET parameters
7. New simple procedure to determine the threshold voltage of MOSFET's
8. A new approach to extraction of the threshold voltage of MOSFET's