Visible blind p+-π-n--n+ ultraviolet photodetectors based on 4H-SiC homoepilayers

Microelectronics Journal

Volumn 37, Issue 11, 2006, Pages 1396-1398

  Liu, X F ^a   Sun, G S ^a   Li, J M ^a   Ning, J ^b   Luo, M C ^a   Wang, L ^a   Zhao, W S ^a   Zeng, Y P ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

Author keywords

4H SiC; p+ n n+; Photodetector; Visible blind

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; LIGHTING; SILICON CARBIDE;

DARK CURRENT; HOMOEPILAYERS; VISIBLE BLIND;

ULTRAVIOLET DETECTORS;

EID: 33751095132     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2006.06.012     Document Type: Article

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