Diamond-based UV photodetectors for high-temperature applications

Electronics Letters

Volumn 35, Issue 20, 1999, Pages 1768-1770

  Salvatori, S ^a   Scotti, F ^a   Conte, G ^a   Rossi, M C ^a  

^a ROMA TRE UNIVERSITY   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

DIAMOND FILMS; HIGH TEMPERATURE APPLICATIONS; METALS; SEMICONDUCTOR MATERIALS; SILICON CARBIDE; THERMAL CONDUCTIVITY;

OPTIMUM VISIBLE REJECTION; SENSITIVITY;

ULTRAVIOLET DETECTORS;

EID: 0033195528     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19991175     Document Type: Article

References (6)

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3. LOOI, H.J., WHITFIELD, M.D., and JACKMAN, R.B.: 'Metal-semiconductor-metal photodiodes fabricated from thin-film diamond', Appl. Phys. Lett., 1999, 74, pp. 3332-3334
4. RALCHENKO, V.G., SOLIN, A.A., KONOV, V.I., SERGEICHEV, K. F., SYCHOV, I.A., VLASOV, I.L, MIGULIN, V.V., VORONINA, S.V., and KHOMICH, A.V.: 'Large-area deposition by microwave plasma', Diam. Relat. Mater., 1997, 6, pp. 417-421
5. CHU, V., CONDE, J.P., SHEN, D.S., and WAGNER, S.: 'Photocurrent collection in a Schottky barrier on amorphous silicon-germanium alloy structure with 1.23 eV optical gap', Appl. Phys. Lett., 1989, 55, pp. 262-265
6. GLASOW, P., ZIEGLER, G., SUTTROP, W., PENSL, G., and HELBIG, R.: '6H-Sic studies and developments at the Corporate Research Laboratory of Siemens AG and the Institute for Applied Physics of the University of Erlangen (FRG)' in HARRIS, G.L., and YANG, C.Y.-W. (Eds.): 'Amorphous and crystalline silicon carbide'. Springer Proc. Physics, 1989, Vol. 34, pp. 13-33