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Volumn 36, Issue 22, 2000, Pages 1869-1870
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To suppress dark current of high temperature β-SiC/Si optoelectronic devices with porous silicon substrate
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Author keywords
[No Author keywords available]
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Indexed keywords
ELECTRIC CURRENTS;
GAIN MEASUREMENT;
POROUS SILICON;
SILICON CARBIDE;
DARK CURRENTS;
OPTOELECTRONIC DEVICES;
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EID: 0034296528
PISSN: 00135194
EISSN: None
Source Type: Journal
DOI: 10.1049/el:20001291 Document Type: Article |
Times cited : (13)
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References (3)
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