Formation, structure, and phonon confinement effect of nanocrystalline Si1-xGex in SiO2-Si-Ge cosputtered films

Journal of Applied Physics

Volumn 96, Issue 9, 2004, Pages 5239-5242

  Yang, Y M ^a   Wu, X L ^b   Siu, G G ^b   Huang, G S ^a   Shen, J C ^a   Hu, D S ^a  

^a NANJING UNIVERSITY   (China)

^b CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ENERGY DISPERSIVE SPECTROSCOPY; GERMANIUM; MAGNETRON SPUTTERING; NANOSTRUCTURED MATERIALS; PHONONS; RAMAN SCATTERING; X RAY DIFFRACTION ANALYSIS;

COSPUTTERED FILMS; LOCAL STRUCTURE; PHONON CONFINEMENT; STRAIN EFFECTS;

SILICON COMPOUNDS;

EID: 9744270689     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1772888     Document Type: Article

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