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Volumn 84, Issue 2, 2004, Pages 278-280

Structural perturbations within Ge nanocrystals in silica

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMS; COMPUTER SIMULATION; CRYSTAL MICROSTRUCTURE; GRAIN SIZE AND SHAPE; INTERFACES (MATERIALS); ION IMPLANTATION; MOLECULAR DYNAMICS; SEMICONDUCTING GERMANIUM; SILICA; THERMOOXIDATION; X RAY SPECTROSCOPY;

EID: 0842333233     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1639136     Document Type: Article
Times cited : (43)

References (10)
  • 6
    • 0842266794 scopus 로고    scopus 로고
    • Ph.D. thesis, Australian National University
    • Values are for bulk Ge amorphized by ion implantation, then thermally annealed at 200°C for 1 h to attain the minimum-energy amorphous-phase configuration, as presented in C. J. Glover, Ph.D. thesis, Australian National University, 2003.
    • (2003)
    • Glover, C.J.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.