Defect-related infrared photoluminescence in Ge+-implanted SiO2 films

Applied Physics Letters

Volumn 74, Issue 17, 1999, Pages 2420-2422

  Wu, X L ^a   Gao, T ^a   Siu, G G ^b   Tong, S ^a   Bao, X M ^a  

^a NANJING UNIVERSITY   (China)

^b CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DOPING (ADDITIVES); INFRARED SPECTROSCOPY; INTERFACES (MATERIALS); ION IMPLANTATION; PHOTOLUMINESCENCE; POINT DEFECTS; SEMICONDUCTING GERMANIUM; SILICA; THERMAL EFFECTS;

VACANCIES;

OPTICAL FILMS;

EID: 0032614035     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.123867     Document Type: Article

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