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Volumn 250, Issue 1-2 SPEC. ISS., 2006, Pages 183-187

Ge nano-layer fabricated by high-fluence low-energy ion implantation

Author keywords

Ge nano layer; Ion implantation; Laser Raman scattering; Photoluminescence; Transmission electron microscopy; X ray diffraction

Indexed keywords

GALLIUM; ION IMPLANTATION; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; RAMAN SCATTERING; SILICA; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

EID: 33746281690     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2006.04.105     Document Type: Article
Times cited : (4)

References (24)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.