Effects of nitrogen content on the structure and electrical properties of high-k NdOxNy gate dielectrics

Journal of Applied Physics

Volumn 103, Issue 12, 2008, Pages

  Pan, Tung Ming ^a   Hou, Sung Ju ^a   Wang, Chih Hwa ^a  

^a CHANG GUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ANNEALING; ARGON; ATOMIC FORCE MICROSCOPY; ATOMIC SPECTROSCOPY; CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC MATERIALS; ELECTRIC PROPERTIES; FORMING; GATES (TRANSISTOR); INERT GASES; LEAKAGE CURRENTS; METAL FORMING; METALS; MICROSCOPIC EXAMINATION; MOLECULAR BEAM EPITAXY; MOLECULAR ORBITALS; MOLECULAR SPECTROSCOPY; MOS CAPACITORS; NEODYMIUM; NITROGEN; OXIDE FILMS; PHOTOELECTRON SPECTROSCOPY; REACTIVE SPUTTERING; SCANNING PROBE MICROSCOPY; SILICA; SILICATE MINERALS; SILICATES; SILICON COMPOUNDS; STRUCTURAL PROPERTIES; X RAY FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

(MIN ,MAX ,+) FUNCTIONS; AMERICAN INSTITUTE OF PHYSICS (AIP); AMORPHOUS SILICA; ATOMIC FORCE (AF); CAPACITANCE-EQUIVALENT-THICKNESS (CET); CAPACITANCE-VOLTAGE (C-V) CURVES; CHEMICAL FEATURES; ELECTRICAL (ELECTRONIC) PROPERTIES; ELECTRICAL CHARACTERISTICS; FLOW RATIOS; GATE-LEAKAGE CURRENTS; GROWTH CONDITIONS; METAL OXIDE FILMS; NITROGEN CONTENTS; NITROGEN FLOWS; R F SPUTTERING; SI(1 0 0 ); SMOOTH SURFACES; SUBSEQUENT ANNEALING; TRAPPED CHARGES; X RAY PHOTOELECTRON SPECTROSCOPY (XPS);

GATE DIELECTRICS;

EID: 46449114611     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2942405     Document Type: Article

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