Growth and optical investigation of self-assembled InGaN quantum dots on a GaN surface using a high temperature AlN buffer

Journal of Applied Physics

Volumn 103, Issue 12, 2008, Pages

  Wang, Q ^a   Wang, T ^a   Bai, J ^a   Cullis, A G ^a   Parbrook, P J ^a   Ranalli, F ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ECOLOGY; FLOW RATE; FULL WIDTH AT HALF MAXIMUM; GALLIUM ALLOYS; GALLIUM NITRIDE; GROWTH TEMPERATURE; LIGHT; OPTICAL PROPERTIES; OPTICAL PUMPING; OPTICAL WAVEGUIDES; QUANTUM ELECTRONICS; SEMICONDUCTING CADMIUM TELLURIDE; SEMICONDUCTING GALLIUM; SEMICONDUCTOR GROWTH; TEMPERATURE; X RAY DIFFRACTION ANALYSIS;

(1 1 0) SURFACE; (P ,P ,T) MEASUREMENTS; (PL) PROPERTIES; ALN BUFFER; AMERICAN INSTITUTE OF PHYSICS (AIP); GROWTH MECHANISMS; HALF MAXIMUM; HIGH QUALITY (HQ); HIGH TEMPERATURE (HT); HIGH-DENSITY; II-IV SEMICONDUCTORS; INGAN QUANTUM DOTS; LARGE DIAMETER; LOW THRESHOLDS; OPTICAL (PET) (OPET); OPTICAL INVESTIGATIONS; QD LAYERS; ROCKING CURVE (RC); ROOM-TEMPERATURE (RT); SAPPHIRE SUBSTRATES; SELF-ASSEMBLED; STRANSKI KRASTANOV (S K) MODE; X-RAY DIFFRACTION MEASUREMENTS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 46449106047     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2939568     Document Type: Article

References (22)

1. S. J. Pearton, J. C. Zolper, R. J. Shul, and F. Ren, J. Appl. Phys. 0021-8979 10.1063/1.371145 86, 1 (1999).
2. S. Nakamura, Science 0036-8075 10.1126/science.281.5379.956 281, 956 (1998).
3. M. Hansen, P. Fini, L. Zhao, A. C. Abare, L. A. Coldren, J. S. Speck, and S. P. DenBaars, Appl. Phys. Lett. 0003-6951 10.1063/1.125808 76, 529 (2000).
4. Y. Arakawa, T. Someya, and K. Tachibana, Phys. Status Solidi B 224, 1 (2001).
5. H. Hirayama, S. Tanaka, P. Ramvall, and Y. Aoyagi, Appl. Phys. Lett. 0003-6951 10.1063/1.121168 72, 1736 (1998).
6. J. S. Huang, Z. Chen, X. D. Luo, Z. Y. Xua, and W. K. Ge, J. Cryst. Growth 0022-0248 10.1016/j.jcrysgro.2003.08.008 260, 13 (2004).
7. J. Wang, M. Nozaki, M. Lachab, Y. Ishikawa, R. S. Q. Fareed, T. Wang, M. Hao, and S. Sakai, Appl. Phys. Lett. 0003-6951 10.1063/1.124564 75, 950 (1999).
8. L. W. Ji, Y. K. Su, S. J. Chang, L. W. Wu, T. H. Fang, J. F. Chen, T. Y. Tsai, Q. K. Xue, and S. C. Chen, J. Cryst. Growth 0022-0248 10.1016/S0022- 0248(02)02130-9 249, 144 (2003).
9. R. A. Oliver, G. A. D. Briggs, M. J. Kappers, C. J. Humphreys, S. Yasin, J. H. Rice, J. D. Smith, and R. A. Taylor, Appl. Phys. Lett. 0003-6951 10.1063/1.1595716 83, 755 (2003).
10. K. Tachibana, T. Someya, R. Werner, A. Forchel, and Y. Arakawa, Physica E (Amsterdam) 1386-9477 10.1016/S1386-9477(00)00093-X 7, 944 (2000).
11. M. Miyamura, K. Tachibana, and Y. Arakawa, Appl. Phys. Lett. 0003-6951 10.1063/1.1482416 80, 3937 (2002).
12. B. Damilano, N. Grandjean, S. Dalmasso, and J. Massies, Appl. Phys. Lett. 0003-6951 10.1063/1.125444 75, 3751 (1999).
13. C. Adelmann, J. Simon, G. Feuillet, N. T. Pelekanos, B. Daudin, and G. Fishman, Appl. Phys. Lett. 0003-6951 10.1063/1.126098 76, 1570 (2000).
14. J. Bai, T. Wang, P. Comming, P. J. Parbrook, J. P. R. David, and A. G. Cullis, J. Appl. Phys. 0021-8979 10.1063/1.2161941 99, 023513 (2006).
15. J. Bai, T. Wang, I. M. Ross, P. J. Parbrook, and A. G. Cullis, J. Cryst. Growth 0022-0248 10.1016/j.jcrysgro.2005.10.146 289, 63 (2006).
16. T. Wang, K. B. Lee, J. Bai, P. J. Parbrook, R. J. Airey, Q. Wang, G. Hill, F. Ranalli, and A. G. Cullis, Appl. Phys. Lett. 89, 0811268 (2006). 0003-6951
17. I. N. Stranski and L. V. Krastanov, Abh. Math.-Naturwiss. Kl., Akad. Wiss. Lit., Mainz 146, 797 (1939).
18. Q. Wang, T. Wang, P. J. Parbrook, J. Bai, and A. G. Cullis, J. Appl. Phys. 0021-8979 10.1063/1.2737971 101, 113520 (2007).
19. M. G. Cheong, H. S. Yoon, R. J. Choi, C. S. Kim, S. W. Yu, C. H. Hong, E. K. Suh, and H. J. Lee, J. Appl. Phys. 0021-8979 10.1063/1.1410320 90, 5642 (2001).
20. X. H. Wu, C. R. Elsass, A. Abare, M. Mack, S. Keller, P. M. Petroff, S. P. Denbarrs, J. S. Speck, and S. J. Rosner, Appl. Phys. Lett. 0003-6951 10.1063/1.120844 72, 692 (1998).
21. N. Sharma, P. Thomas, D. Tricker, and C. Humphrey, Appl. Phys. Lett. 0003-6951 10.1063/1.1289904 77, 1274 (2000).
22. Ü. Özgür, H. O. Everitt, S. Keller, and S. P. DenBaars, Appl. Phys. Lett. 0003-6951 10.1063/1.1557770 82, 1416 (2003).