MOCVD growth of a stacked InGaN quantum dot structure and its lasing oscillation at room temperature

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 7, Issue 3, 2000, Pages 944-948

  Tachibana, K ^a   Someya, T ^a   Werner, R ^b   Forchel, A ^b   Arakawa, Y ^a  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^b UNIVERSITY OF WÜRZBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

LIGHT EMISSION; LIGHT POLARIZATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OSCILLATIONS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SEMICONDUCTOR LASERS;

LASING OSCILLATIONS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0033686080     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(00)00093-X     Document Type: Article

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