Hydrogen incorporation into SiC using plasma-hydrogenation

Materials Science Forum

Volumn 389-393, Issue 1, 2002, Pages 569-572

  Koshka, Y ^a   Draper, W A ^a   Lakshman, R Y ^a   Scofield, J ^b   Saddow, S E ^c  

^a MISSISSIPPI STATE UNIVERSITY   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

^c UNIVERSITY OF SOUTH FLORIDA   (United States)

Author keywords

Hydrogen plasma; Hydrogenation; ICP; Passivation; RIE

Indexed keywords

CRYSTAL DEFECTS; DIFFUSION; HYDROGENATION; INDUCTIVELY COUPLED PLASMA; ION IMPLANTATION; PLASMA ETCHING; REACTIVE ION ETCHING; SILICON CARBIDE; HYDROGEN; PASSIVATION;

HYDROGEN PENETRATION; HYDROGEN PLASMA; LATTICE DAMAGE; PLASMA ETCHING SYSTEMS; DEFECT PASSIVATION; ETCHING SYSTEMS; HYDROGEN INCORPORATION; HYDROGEN PLASMAS; INDUCTIVELY COUPLED PLASMA (ICP); PLASMA HYDROGENATION;

HYDROGEN; HYDROGENATION;

EID: 1442271681     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.389-393.569     Document Type: Article

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