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Volumn 389-393, Issue 1, 2002, Pages 521-524
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Radiation-induced defects in p-type silicon carbide
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Author keywords
Electron irradiation; Electron spin resonance; Neutron irradiation; SiC; Thermal annealing
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Indexed keywords
ANNEALING;
ELECTRON IRRADIATION;
LIQUID NITROGEN;
PARAMAGNETIC RESONANCE;
SILICON CARBIDE;
SINGLE CRYSTALS;
DEFECTS;
ELECTRONS;
ELECTROSPINNING;
LIQUEFIED GASES;
MAGNETIC MOMENTS;
SPIN DYNAMICS;
CARBON VACANCY;
LIQUID NITROGEN TEMPERATURE;
ROOM TEMPERATURE;
THERMAL ANNEALING;
ANNEALING BEHAVIOR;
COMPLEX DEFECTS;
ELECTRON SPIN RESONANCE MEASUREMENTS;
RADIATION INDUCED DEFECTS;
SIC SINGLE CRYSTALS;
SILICON VACANCIES;
THERMAL-ANNEALING;
VACANCIES;
NEUTRON IRRADIATION;
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EID: 4644337612
PISSN: 02555476
EISSN: 16629752
Source Type: Book Series
DOI: 10.4028/www.scientific.net/msf.389-393.521 Document Type: Article |
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Times cited : (5)
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References (8)
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