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Volumn 389-393, Issue , 2002, Pages 1137-1140
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A comparative study of the electrical properties of 4H-SiC epilayers with continuous and dissociated micropipes
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Author keywords
4H SiC; Breakdown voltage; I V characteristics; Micropipe dissociation; Micropipes
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Indexed keywords
DISSOCIATION;
ELECTRIC BREAKDOWN;
EPILAYERS;
SCHOTTKY BARRIER DIODES;
SCREW DISLOCATIONS;
CURRENT VOLTAGE CHARACTERISTICS;
HYDROGEN;
VAPOR PHASE EPITAXY;
4H-SIC;
COMPARATIVE STUDIES;
IV CHARACTERISTICS;
MICROPIPES;
ON CURRENTS;
REVERSE BLOCKING;
SCHOTTKY BARRIER DIODES (SBDS);
SIC EPILAYERS;
EPILAYERS;
SILICON CARBIDE;
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EID: 0036433807
PISSN: 02555476
EISSN: 16629752
Source Type: Book Series
DOI: 10.4028/www.scientific.net/MSF.389-393.1137 Document Type: Conference Paper |
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Times cited : (8)
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References (8)
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