Passivation of deep levels in 3C-SiC on Si by a hydrogen plasma treatment

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 4 B, 2001, Pages 2983-2986

  Kato, Masashi ^a   Sobue, Fumitaka ^a   Ichimura, Masaya ^a   Arai, Eisuke ^a   Yamada, Noboru ^b   Tokuda, Yutaka ^c   Okumura, Tsugunori ^d  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

^b Rd Management Section   (Japan)

^c AICHI INSTITUTE OF TECHNOLOGY   (Japan)

^d TOKYO METROPOLITAN UNIVERSITY   (Japan)

Author keywords

3C SiC; Annealing; Deep level transient spectroscopy; Hydrogen plasma; Passivation; Plasma damage

Indexed keywords

ACTIVATION ENERGY; DEEP LEVEL TRANSIENT SPECTROSCOPY; HYDROGEN; PASSIVATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PROPANE; RAPID THERMAL ANNEALING; SEMICONDUCTOR GROWTH; SILANES;

PLASMA INDUCED DEEP-LEVELS;

SILICON CARBIDE;

EID: 0035300643     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.2983     Document Type: Article

References (9)