|
Volumn 719, Issue , 2002, Pages 35-40
|
Influence of substrate surface morphology on defect generation during silicon carbide single crystal growth
a a a a a a |
Author keywords
[No Author keywords available]
|
Indexed keywords
ATOMIC FORCE MICROSCOPY;
CRYSTAL GROWTH;
ETCHING;
SCANNING ELECTRON MICROSCOPY;
SILICON CARBIDE;
DEFECT GENERATION;
PHYSICAL VAPOR TRANSPORT;
SINGLE CRYSTALS;
|
EID: 0036454310
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1557/proc-719-f8.12 Document Type: Conference Paper |
Times cited : (2)
|
References (10)
|