Deep center passivation in 3C-SiC by hydrogen plasma with a grid for damage suppression

Solid-State Electronics

Volumn 46, Issue 12, 2002, Pages 2099-2104

  Kato, M ^a   Sobue, F ^a   Ichimura, M ^a   Arai, E ^a   Yamada, N ^b   Tokuda, Y ^c   Okumura, T ^d  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

^b Rd Management Section   (Japan)

^c AICHI INSTITUTE OF TECHNOLOGY   (Japan)

^d TOKYO METROPOLITAN UNIVERSITY   (Japan)

Author keywords

Deep levels; Hydrogen plasma; Passivation; SiC

Indexed keywords

ANNEALING; DEEP LEVEL TRANSIENT SPECTROSCOPY; HYDROGEN; PASSIVATION; PLASMAS;

DAMAGE SUPPRESSION; PLASMA TREATMENT;

SILICON CARBIDE;

EID: 0036889834     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00182-X     Document Type: Article

References (11)

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