A C-band AlGaN/GaN HEMT with cat-CVD SiN passivation developed for an over 100 W operation

IEEE MTT-S International Microwave Symposium Digest

Volumn 2005, Issue , 2005, Pages 495-498

  Kamo, Y ^a   Kunii, T ^a   Takeuchi, H ^a   Yamamoto, Y ^a   Totsuka, M ^a   Shiga, T ^a   Minami, H ^a   Kitano, T ^a   Miyakuni, S ^a   Oku, T ^a   Inoue, A ^a   Nanjo, T ^a   Chiba, H ^a   Suita, M ^a   Oishi, T ^a   Abe, Y ^a   Tsuyama, Y ^a   Shirahana, R ^a   Ohtsuka, H ^a   Iyomasa, K ^a   Yamanaka, K ^a   Hieda, M ^a   Nakayama, M ^a   Ishikawa, T ^a   Takagi, T ^a   Marumoto, K ^a   Matsuda, Y ^a   more..

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

C band; Cat CVD; Collapse; GaN; HEMT; High breakdown voltage; High power; NH 3

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRIC POTENTIAL; LEAKAGE CURRENTS; NATURAL FREQUENCIES; SEMICONDUCTING GALLIUM ARSENIDE; SILICON COMPOUNDS; TRANSIENTS;

C-BAND; CAT-CVD; COLLAPSE; HIGH BREAKDOWN VOLTAGE; HIGH POWER; NH 3;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 33644771297     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2005.1516638     Document Type: Conference Paper

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