Hot-electron capture for CHEI programming in SONOS-type flash memory using high- κ trapping layer

IEEE Transactions on Electron Devices

Volumn 55, Issue 6, 2008, Pages 1502-1510

  Zhang, Gang ^a   Yoo, Won Jong ^a   Ling, Chung Ho ^b  

^a Sungkyunkwan University   (South Korea)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

Channel hot electron injection (CHEI); High ; Hot electron capture; Polysilicon oxide nitride oxide silicon (SONOS) Flash memory

Indexed keywords

CHARGE TRAPPING; HOT ELECTRONS; SEMICONDUCTING SILICON COMPOUNDS; ZIRCONIA;

CHANNEL HOT-ELECTRON INJECTION; POLYSILICON-OXIDE-NITRIDE-OXIDE-SILICON;

FLASH MEMORY;

EID: 44949206685     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.922854     Document Type: Article

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