Double-dielectric-mirror InGaN/GaN microcavities formed using selective removal of an AlInN layer

Superlattices and Microstructures

Volumn 41, Issue 5-6, 2007, Pages 414-418

  Rizzi, F ^a   Edwards, P R ^a   Bejtka, K ^a,b   Semond, F ^b   Gu, E ^a   Dawson, M D ^a   Watson, I M ^a   Martin, R W ^a  

^a UNIVERSITY OF STRATHCLYDE   (United Kingdom)

^b CRHEA CNRS   (France)

Author keywords

AlInN; Cathodoluminescence; GaN; InGaN; Microcavity; Photoluminescence; Quantum well; Reflectance; Wet etching

Indexed keywords

CATHODOLUMINESCENCE; GALLIUM NITRIDE; PHOTOLUMINESCENCE; REFLECTION; SEMICONDUCTOR QUANTUM WELLS; WET ETCHING;

CAVITY QUALITY FACTOR; EXCITONIC EMISSION;

MICROCAVITIES;

EID: 34250217054     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2007.03.031     Document Type: Article

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