Growth and optical and structural characterizations of GaN on freestanding GaN substrates with an (Al,In)N insertion layer

Applied Physics Letters

Volumn 89, Issue 19, 2006, Pages

  Bejtka, K ^a,b   Martin, R W ^b   Watson, I M ^b   Ndiaye, S ^a   Leroux, M ^a  

^a CRHEA CNRS   (France)

^b UNIVERSITY OF STRATHCLYDE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; EXCITONS; HETEROJUNCTIONS; INSERTION LOSSES; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SAPPHIRE; STRUCTURAL ANALYSIS; SUBSTRATES; THIN FILMS;

EXCITONIC TRANSITIONS; STRAIN FREE GAN; STRUCTURAL PROPERTIES;

GALLIUM NITRIDE;

EID: 33750898657     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2385113     Document Type: Article

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