(In,Ga)N/GaN microcavities with double dielectric mirrors fabricated by selective removal of an (Al,In)N sacrificial layer

Applied Physics Letters

Volumn 90, Issue 11, 2007, Pages

  Rizzi, F ^a   Edwards, P R ^a   Bejtka, K ^a   Semond, F ^b   Kang, X N ^c   Zhang, G Y ^c   Gu, E ^a   Dawson, M D ^a   Watson, I M ^a   Martin, R W ^a  

^a UNIVERSITY OF STRATHCLYDE   (United Kingdom)

^b CRHEA CNRS   (France)

^c PEKING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; EXCITONS; GROWTH (MATERIALS); MICROCAVITIES;

DIELECTRIC MIRRORS; EXCITONIC EMISSION; MECHANICAL THINNING; SPACER LAYERS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 33947324357     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2712786     Document Type: Article

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