DC-stress-induced degradation of analog characteristics in Hf xAl(1-x)O MIM capacitors

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2006, Pages

  Takeda, Kenichi ^a   Yamada, Renichi ^a   Imai, Toshinori ^a   Fujiwara, Tuyoshi ^a   Hashimoto, Takashi ^a   Ando, Toshio ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; CAPACITANCE; CONCENTRATION (PROCESS); DEGRADATION; ELECTRON DEVICES; HAFNIUM; LINEARIZATION; MIM DEVICES; SULFATE MINERALS;

AL CONCENTRATIONS; CONSTANT VOLTAGE STRESS; M-I-M CAPACITORS; STRESS-INDUCED DEGRADATION; TIME-DEPENDENT;

DATA STORAGE EQUIPMENT;

EID: 46049114329     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2006.346783     Document Type: Conference Paper

References (4)

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2. X. Zhao, and D. Vanderbilt, Phys. Rev. B, 65, p. 233106, 2002.
3. M. Gevers, Philips Res. Rep., 1, p. 197, 1945.
4. A. K. Jonscher, Dielectric Relaxation in Solids (Chelsea Dielectric Press, London, 1983), p.209.