A scaleable metal-insulator-metal capacitors process for 0.35 to 0.18 μm analog and RFCMOS

2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings

Volumn 1, Issue , 2001, Pages 243-246

  Shao, Kai ^a   Chu, Sanford ^a   Chew, Kok Wai ^a   Wu, Guan Ping ^a   Ng, Chit Hwei ^a   Tan, N ^a   Shen, B ^b   Yin, A ^b   Zheng, Zhe Yuan ^b  

^a CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

^b Rockwell Semiconductor Systems   (United States)

Author keywords

Analog; MIM; RFCMOS

Indexed keywords

EID: 84966470605     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICSICT.2001.981465     Document Type: Conference Paper

References (4)

1. K.Imai etc, NEC Corporation, Proc. of 2000 International Electron Devices Meeting, (San Francisco, US) p. 455.
2. Peter Zurcher etc. Motorola, Proc. of 2000 International Electron Devices Meeting, (San Francisco, US) p. 153.
3. M.Armacost etc, IBM,, Proc. of 2000 International Electron Devices Meeting, (San Francisco, US) p. 157.
4. Arjun Kar-Roy, etc., Conexant Systems, Proc. of IITC 99 p. 245.