Electrical characteristics and reliability of UV transparent Si3N4 metal-insulator-metal (MIM) capacitors

IEEE Transactions on Electron Devices

Volumn 50, Issue 4, 2003, Pages 941-944

  Bolam, Ronald J ^a   Ramachandran, Vidhya ^a   Coolbaugh, Doug ^a   Watson, Kimball M ^a  

^a IBM MICROELECTRONICS   (United States)

Author keywords

Bi CMOS; Capacitors; Metal insulator metal (MIM); Passive elements; Reliability; RF CMOS

Indexed keywords

ACTIVATION ENERGY; CAPACITANCE; CAPACITORS; CMOS INTEGRATED CIRCUITS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTANCE; FILMS; MAXIMUM LIKELIHOOD ESTIMATION; PERMITTIVITY; SILICON NITRIDE; STRESSES; TEMPERATURE; WEIBULL DISTRIBUTION;

PASSIVE ELEMENTS;

MIM DEVICES;

EID: 0037480886     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.812148     Document Type: Article

References (10)

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