Advanced characterization of Si/Si1-yCy heterostructures for nMOS devices

Materials Science and Engineering: B

Volumn 102, Issue 1-3, 2003, Pages 119-122

  Laugier, F ^a   Holliger, P ^a   Hartmann, J M ^a   Ernst, T ^a   Loup, V ^a   Rolland, G ^a   Lafond, D ^a  

^a CEA GRENOBLE   (France)

Author keywords

nMOS transistor; Reduced pressure chemical vapor deposition; Si1 yCy; SIMS; XRD

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; DIFFUSION; INTERFACES (MATERIALS); MOS DEVICES; SECONDARY ION MASS SPECTROMETRY; SILICON; SUBSTITUTION REACTIONS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

INTERSITIAL CARBON ATOMS;

HETEROJUNCTIONS;

EID: 0041511703     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(03)00016-3     Document Type: Conference Paper

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