Strain-engineered Si/SiGe resonant interband tunneling diodes grown on Si0.8Ge0.2 virtual substrates with strained Si cladding layers

IEEE Electron Device Letters

Volumn 29, Issue 6, 2008, Pages 599-602

  Jin, Niu ^a,b   Yu, Ronghua ^c   Chung, Sung Yong ^a,d   Berger, Paul R ^a,e   Thompson, Philip E ^e  

^a The Ohio State University   (United States)

^b NATIONAL SEMICONDUCTOR CORPORATION   (United States)

^c OHIO STATE UNIVERSITY   (United States)

^d Submicron Development Center   (United States)

^e NAVAL RESEARCH LABORATORY   (United States)

Author keywords

Negative differential resistance; Resonant interband tunneling diodes (RITDs); Semiconductor epitaxial layers; Silicon alloys; Silicon germanium; Strained layers; Tunnel diodes

Indexed keywords

EPITAXIAL LAYERS; RESONANT TUNNELING; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SILICON ALLOYS; SUBSTRATES;

RESONANT INTERBAND TUNNELING DIODES (RITDS); SILICON GERMANIUM; STRAINED LAYERS;

TUNNEL DIODES;

EID: 44849096603     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.923208     Document Type: Article

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