Epitaxial growth of SiGe interband tunneling diodes on Si(001) and on Si0.7Ge0.3 virtual substrates

IEICE Transactions on Electronics

Volumn E89-C, Issue 7, 2006, Pages 921-925

  Stoffel, Mathieu ^a   Zhang, Jing ^b   Schmidt, Oliver G ^a  

^a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

^b IMPERIAL COLLEGE LONDON   (United Kingdom)

Author keywords

Interband tunneling diodes; Negative differential resistance; SiGe; SiGe relaxed buffers

Indexed keywords

ELECTRIC CURRENTS; EPITAXIAL GROWTH; OPTIMIZATION; SEMICONDUCTING GERMANIUM COMPOUNDS; SUBSTRATES; TRANSISTORS; TUNNEL DIODES;

INTERBAND TUNNELING DIODES; NEGATIVE DIFFERENTIAL RESISTANCE; SIGE; SIGE RELAXED BUFFERS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 33747884660     PISSN: 09168524     EISSN: 17451353     Source Type: Journal    
DOI: 10.1093/ietele/e89-c.7.921     Document Type: Conference Paper

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