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Defect and Diffusion Forum

Volumn , Issue 194-199 PART 1, 2001, Pages 709-716

Phosphorus diffusion in Si1-xGex

(4) Christensen, J S a Kuznetsov, A Yu a Radamson, H H a Svensson, B G a

a ROYAL INSTITUTE OF TECHNOLOGY (Sweden)

Author keywords

Diffusion; Germanium; Phosphorus; Segregation; Silicon; Strain

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; DIFFUSION; EPITAXIAL GROWTH; HETEROJUNCTIONS; RELAXATION PROCESSES; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING;

LOW PRESSURE CHEMICAL VAPOR DEPOSITION (LPCVD);

PHOSPHORUS;

EID: 0035780556 PISSN: 10120386 EISSN: 16629507 Source Type: Journal
DOI: 10.4028/www.scientific.net/ddf.194-199.709 Document Type: Article

Times cited : (6)

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