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Journal of Crystal Growth

Volumn 227-228, Issue , 2001, Pages 770-776

Si-based resonant inter- and intraband tunneling diodes

(5) Eberl, K a Duschl, R a Schmidt, O G a Denker, U a Haug, R b

a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG (Germany)

b LEIBNIZ UNIVERSITY HANNOVER (Germany)

Author keywords

B2. Semiconducting silicon; B3. Esaki diode

Indexed keywords

CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON TRANSITIONS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING BORON; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SUBSTRATES; THERMOANALYSIS;

PEAK CURRENT DENSITY (PCD); PEAK TO VALLEY CURRENT RATIO (PVCR);

TUNNEL DIODES;

EID: 0035398938 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(01)00858-2 Document Type: Conference Paper

Times cited : (20)

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