Investigation on molybdenum and its conductive oxides as p-type metal gate candidates

Journal of the Electrochemical Society

Volumn 155, Issue 7, 2008, Pages

  Li, Zilan ^a,b,f   Schram, Tom ^a   Witters, Thomas ^a   Cho, Hag Ju ^c   O'Sullivan, Barry ^a   Yamada, Naoki ^d   Takaaki, Tsunoda ^d   Hooker, Jacob ^e   De Gendt, Stefan ^a,b,f   De Meyer, Kristin ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c IMEC

^d NXP Semiconductor Research ^*

^e NXP   (Belgium)

^f ELECTROCHEMICAL SOCIETY

Author keywords

[No Author keywords available]

Indexed keywords

OXIDES; OXYGEN; PHASE SEPARATION; SILICON COMPOUNDS;

GATE LEAKAGE; OXIDE THICKNESS; OXYGEN INCORPORATION;

MOLYBDENUM COMPOUNDS;

EID: 44449140527     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2908818     Document Type: Article

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