Contribution of interface states and bulk traps to GaAs MIS admittance

Institute of Physics Conference Series

Volumn 174, Issue , 2003, Pages 37-40

  Kochowski, S ^a   Paszkiewicz, B ^b   Paszkiewicz, R ^b  

^a SILESIAN UNIVERSITY OF TECHNOLOGY   (Poland)

^b WROCLAW UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRIC INSULATORS; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; ELECTRONS; FUNCTIONS; INTERFACES (MATERIALS); PARAMETER ESTIMATION;

BULK TRAPS; FREQUENCY DISPERSION; GATE VOLTAGE; INTERFACE STATE;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 4444324201     PISSN: 09513248     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

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2. Hasegawa H and Sawada T 1983 Thin Solid Films 103 119-140
3. Kochowski S and Nowak M 1999 Vacuum 54 183-188
4. Kochowski S, Nitsch K and Paszkiewicz R 1999 Thin Solid Films 348 180-187
5. Dharival S R and Deoraj B M 1993 Solid State Electron. 36 1165-1174
6. Bayraktaroglu B and Johnson R L 1981 J. Appl. Phys. 52 3515-3519
7. Martin G M, Mitonneau A and Mircea A 1977 Electron. Lett. 13 191-193