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Volumn 80, Issue 1-3, 2001, Pages 142-146
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Absolute determination of the Fermi level pinning at the dielectric/semiconductor interface in GaAs based heterostructures
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Author keywords
Fermi level pinning; GaAs; Hall effect; Interface state characterization; Pseudomorphic heterostructure; Semiconductor dielectric interface; Surface potential; Surface states
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Indexed keywords
DIELECTRIC MATERIALS;
ELECTRIC POTENTIAL;
FERMI LEVEL;
HALL EFFECT;
INTERFACES (MATERIALS);
SEMICONDUCTING GALLIUM ARSENIDE;
SPECTROSCOPIC ANALYSIS;
TRANSIENTS;
CONSTANT FERMI LEVEL TRANSIENT SPECTROSCOPY (CFTS);
HETEROJUNCTIONS;
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EID: 0035932284
PISSN: 09215107
EISSN: None
Source Type: Journal
DOI: 10.1016/S0921-5107(00)00636-X Document Type: Article |
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Times cited : (4)
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References (11)
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