SCOPUS 정보 검색 플랫폼

Solid-State Electronics

Volumn 43, Issue 3, 1999, Pages 583-588

Effect of chalcogenide elements on the electrical characteristics of GaAs MIS structures

(3) Gaman, V I a Kalygina, V M a Panin, A V b

a TOMSK STATE UNIVERSITY (Russian Federation)

b ENERGY SYSTEMS INSTITUTE (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; INTERFACES (MATERIALS); PASSIVATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SELENIUM; SEMICONDUCTING TELLURIUM; SULFUR;

CAPACITANCE-VOLTAGE CHARACTERISTICS; CHALCOGENIDE ELEMENTS; CONDUCTANCE-VOLTAGE CHARACTERISTICS;

MISFET DEVICES;

EID: 0033098472 PISSN: 00381101 EISSN: None Source Type: Journal
DOI: 10.1016/S0038-1101(98)00320-7 Document Type: Article

Times cited : (7)

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