SIMS characterization of GaAs MIS devices at the interface

Thin Solid Films

Volumn 411, Issue 2, 2002, Pages 240-246

  Chakraborty, B R ^a   Dilawar, Nita ^a   Pal, S ^b   Bose, D N ^b  

^a NATIONAL PHYSICAL LABORATORY   (India)

^b INDIAN INSTITUTE OF TECHNOLOGY   (India)

Author keywords

Fermi level pinning; Passivation; Secondary ion mass spectrometry; Surface and interface states

Indexed keywords

DATA ACQUISITION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HIGH ELECTRON MOBILITY TRANSISTORS; INTERFACES (MATERIALS); MANAGEMENT INFORMATION SYSTEMS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; MOSFET DEVICES; NATURAL FREQUENCIES; PASSIVATION; RAPID THERMAL ANNEALING; SECONDARY ION MASS SPECTROMETRY;

FERMI LEVEL PINNING; SURFACE AND INTERFACE STATES; VERTICAL GRADIENT FREEZE (VGF);

GALLIUM COMPOUNDS;

EID: 0346834163     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(02)00277-8     Document Type: Article

References (18)

1. E.S. Aydil, Z. Zhou, K.P. Giapis, Y. Chabal, J.A. Gregus, R.A. Gottscho, Appl. Phys. Letts. 62 (24) (1993) 3156.
2. M. Passlack, et al., J. Appl. Phys. 77 (1995) 686.
3. C.B. Thurmond, G.P. Schwartz, G.W. Kammlott, B. Schwartz, J. Electrochem. Soc. 127 (1980) 1366.
4. C.W. Wilmsen, in: C.W. Wilmsen (Ed.), Physics and Chemistry of III-V Compound Semiconductors Interfaces, Plenum, NY, 1985, p. 403.
5. A. Callegari, P.D. Hoh, D.A. Buchanan, D. Lacey, Appl. Phys. Lett. 54 (4) (1989) 332.
6. S.D. Offsey, J.M. Woodall, A.C. Warren, P.D. Kirchner, T.I. Chappel, G.D. Pettit, Appl. Phys. Lett. 48 (1986) 475.
7. C.J. Sandroff, R.N. Nottenburg, J.C. Bischoff, R. Bhat, Appl. Phys. Lett. 51 (1987) 33.
8. L.G. Quagliano, Appl. Surf. Sci. 153 (2000) 240.
9. J.J. Pankove, Air Force Office of Scientific Research Technical Report No. AFOSR-TR-80-1029 (Oct. 1980).
10. S. Pal, D.N. Bose, Appl. Surf. Sci. 180 (3/4) (2001) 179.
11. D.R. Sharma, B.R. Chakraborty, M.L. Das, Appl. Surf. Sci. 135 (1998) 193.
12. R.G. Wilson, F.A. Stevie, C.W. Magee, Secondary Ion Mass Spectrometry, Wiley, New York, 1989, p. p-H.30.
13. W.A. Hill, C.C. Coleman, Solid State Electron. 23 (1980) 987.
14. F. Capasso, G.F. Williams, J. Electrochem. Soc. 129 (4) (1982) 821.
15. W.D. Brown, M.A. Khaliq, Appl. Surf. Sci. (1989).
16. M.D. Clark, C. Lawrence Anderson, J. Vac. Sci. Technol. 21 (2) (1982) 453.
17. P.D. Richard, R.J. Markunhas, G. Lucovsky, G.G. Fountain, A.N. Mansour, D.V. Tsu, J. Vac. Sci. Technol. A 3 (3) (1985) 867.
18. G. Lucovsky, S.Y. Lin, J. Vac. Sci. Technol. B 3 (4) (1985) 1122.