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Volumn 373, Issue 1-2, 2000, Pages 180-183

Dependency of reactive magnetron-sputtered SiC film quality on the deposition parameters

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; ELLIPSOMETRY; FOURIER TRANSFORM INFRARED SPECTROSCOPY; MAGNETRON SPUTTERING; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON CARBIDE; SUBSTRATES; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

EID: 0034262901     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)01130-5     Document Type: Article
Times cited : (10)

References (9)
  • 5
    • 85086809534 scopus 로고    scopus 로고
    • III-nitrides, SiC and diamond materials for electronic devices
    • D.K. Gaskill, C.D. Brandt, Nemanich R.J.
    • Chen Z., Yang K., Zhong R., Shi H., Zheng Y. III-nitrides, SiC and diamond materials for electronic devices. Gaskill D.K., Brandt C.D., Nemanich R.J. Materials Research Society Symposium Proceedings. 423:1996;753.
    • (1996) Materials Research Society Symposium Proceedings , vol.423 , pp. 753
    • Chen, Z.1    Yang, K.2    Zhong, R.3    Shi, H.4    Zheng, Y.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.