Chemical, energetic, and geometric heterogeneity of device-quality (1 0 0) surfaces of single crystalline silicon after HF aq etching

Applied Surface Science

Volumn 254, Issue 18, 2008, Pages 5781-5790

  Cerofolini, G F ^a   Giussani, A ^a   Modelli, A ^a   Mascolo, D ^a   Ruggiero, D ^a   Narducci, D ^b   Romano, E ^b  

^a STMICROELECTRONICS   (Italy)

^b UNIVERSITY OF MILANO BICOCCA   (Italy)

Author keywords

(1 0 0)Silicon; Angle resolved X ray photoelectron spectroscopy; Atomic force microscopy; Hydrogen termination; Multiple internal reflection infrared spectroscopy; Substoichiometric oxide

Indexed keywords

ATOMIC FORCE MICROSCOPY; ETCHING; INFRARED SPECTROSCOPY; SILICON; STOICHIOMETRY; SURFACE PROPERTIES; X RAY PHOTOELECTRON SPECTROSCOPY;

ANGLE RESOLVED X RAY PHOTOELECTRON SPECTROSCOPY; HYDROGEN TERMINATION; MULTIPLE INTERNAL REFLECTION INFRARED SPECTROSCOPY; SUBSTOICHIOMETRIC OXIDE;

SINGLE CRYSTALS;

EID: 44349190218     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.03.058     Document Type: Article

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