Etch rates of anodic silicon oxides in dilute fluoride solutions

Journal of the Electrochemical Society

Volumn 150, Issue 5, 2003, Pages

  Yahyaoui, F ^a,b,c   Dittrich, Th ^d   Aggour, M ^a   Chazalviel, J N ^b   Ozanam, F ^b   Rappich, J ^c  

^a IBN TOFAIL UNIVERSITY   (Morocco)

^b LABORATOIRE DE PHYSIQUE DE LA MATIÈRE CONDENSÉE   (France)

^c HAHN MEITNER INSTITUT   (Germany)

^d TECHNICAL UNIVERSITY OF MUNICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANODES; COMPUTER SIMULATION; ELECTROCHEMISTRY; ELECTRONIC PROPERTIES; ETCHING; FLUORINE COMPOUNDS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; INTERFACES (MATERIALS); OPTICAL VARIABLES MEASUREMENT; OSCILLATIONS; PH EFFECTS; SOLUTIONS;

ANODIC CURRENT OSCILLATIONS; ANODIC SILICON OXIDES; DILUTE FLUORIDE SOLUTIONS; ETCH RATE; PHOTOLUMINESCENCE MEASUREMENT; PHOTOVOLTAGE MEASUREMENT; TIME DEPENDENT CURRENT;

SILICON COMPOUNDS;

EID: 0037503001     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1563652     Document Type: Article

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