Si interstitial contribution of F+ implants in crystalline Si

Journal of Applied Physics

Volumn 103, Issue 9, 2008, Pages

  López, Pedro ^a   Pelaz, Lourdes ^a   Duffy, R ^b   Meunier Beillard, P ^b   Roozeboom, F ^b   Van Der Tak, K ^c   Breimer, P ^c   Van Berkum, J G M ^c   Verheijen, M A ^c   Kaiser, M ^c  

^a UNIVERSITY OF VALLADOLID   (Spain)

^b NXP SEMICONDUCTORS   (Netherlands)

^c PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; CRYSTALLINE MATERIALS; SILICON COMPOUNDS; SUPERSATURATION;

FRENKEL PAIRS; INTERSTITIAL SUPERSATURATION;

ION IMPLANTATION;

EID: 43949117448     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2917297     Document Type: Article

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