Effect of fluorine implantation dose on boron thermal diffusion in silicon

Journal of Applied Physics

Volumn 96, Issue 8, 2004, Pages 4114-4121

  El Mubarek, H A W ^a   Bonar, J M ^a   Dilliway, G D ^a   Ashburn, P ^a   Karunaratne, M ^a   Willoughby, A F ^a   Wang, Y ^b   Hemment, P L F ^b   Price, R ^c   Zhang, J ^c   Ward, P ^d  

^a UNIVERSITY OF SOUTHAMPTON   (United Kingdom)

^b UNIVERSITY OF SURREY   (United Kingdom)

^c IMPERIAL COLLEGE LONDON   (United Kingdom)

^d STMICROELECTRONICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; CONCENTRATION (PROCESS); MOLECULAR BEAM EPITAXY; SECONDARY ION MASS SPECTROMETRY; SILICON; THERMAL DIFFUSION; THERMOANALYSIS; TRANSMISSION ELECTRON MICROSCOPY;

CLUSTER FORMATIONS; DAMAGES; DISLOCATION LOOPS; THERMAL ANNEALING;

FLUORINE;

EID: 7544231714     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1790063     Document Type: Article

References (30)

1. R. G. Wilson, J. Appl. Phys. 54, 6879 (1983).
2. K. Ohyu, T. Itoga, and N. Natsuaki, Jpn. J. Appl. Phys., Part 1 29, 457 (1990).
3. D. Fan, J. M. Parks, and R. J. Jaccodine, Appl. Phys. Lett. 59, 1212 (1991).
4. L. Y. Krasnobaev, N. M. Omelyanovskaya, and V. V. Makarov, J. Appl. Phys. 74, 6020 (1993).
5. T. H. Huang, H. Kinoshita, and D. L. Kwong, Appl. Phys. Lett. 65, 1829 (1994).
6. H. -H. Vuong et al., J. Appl. Phys. 77, 3056 (1995).
7. D. F. Downey, J. W. Chow, E. Ishida, and K. S. Jones, Appl. Phys. Lett. 73, 1263 (1998).
8. Y.-J. Park and J-J Kim, J. Appl. Phys. 85, 803 (1999).
9. J. Liu, D. F. Downey, K. S. Jones, and E. Ishida, Proceedings of the International Conference on Ion Implantation Technology, Kyoto, Japan, 22-26 June 1998, edited by J. Matsuo, G. Takaoka, and I. Yamada (IEEE,Piscataway, NJ, 1999), Vol. 2, p. 951.
10. E. Ishida, D. F. Downey, K. S. Jones, and J. Liu, Proceedings of the International Conference on Ion Implantation Technology, Kyoto, Japan, 22-26 June 1998, edited by J. Matsuo, G. Takaoka, and I. Yamada (IEEE, Piscataway, NJ, 1999), Vol. 2, p. 909.
11. L. S. Robertson, P. N. Warnes, K. S. Jones, S. K. Earles, M. E. Law, D. F. Downey, S. Falk, and J. Liu, Mater. Res. Soc. Symp. Proc. 610, B4.2.1 (2000).
12. N. Ohno, T. Hara, Y. Matsunaga, M. I. Current, and M. Inoue, Mater. Sci. Semicond. Process. 3, 221 (2000).
13. T. S. Shano, R. Kim, T. Hirose, Y. Furuta, H. Tsuji, M. Furushashi, and K. Taniguchi, Tech. Dig. - Int. Electron Devices Meet. 37, 41 (2001).
14. A. Mokhberi, R. Kasnavi, P. B. Griffin, and J. D. Plummer, Appl. Phys. Lett. 80, 3530 (2002).
15. J. M. Jacques, L. S. Robertson, and K. S. Jones, Mater. Res. Soc. Symp. Proc. 717, C461 (2002).
16. A. Dusch, J. Marcon, K. Masmoudi, K. Ketata, F. Olivie, M. Benzohra, and M. Ketata, Nucl. Instrum. Methods Phys. Res. B 186, 360 (2002).
17. M. Diebel, S. Charkravarthi, C. F. Machala, S. Ekbote, A. Jain, and S. T. Dunham, Mater. Res. Soc. Symp. Proc. 765, D6.15 (2003).
18. H. A. W. El Mubarek and P. Ashburn, Appl. Phys. Lett. 83, 4134 (2003).
19. K. Liu, J. Wu, J. Chen, and A. Jain, IEEE Electron Device Lett. 24, 180 (2003).
20. H. Fukutome, Y. Momiyama, H. Nakao, T. Aoyama, and H. Arimoto, Tech. Dig. - Int. Electron Devices Meet. 2003, 485.
21. P. Ashburn, Design and Realization of Bipolar Transistors (Wiley, New York, 1988).
22. D. J. Eaglesham, P. A. Stolk, H.-J. Gossmann, and J. M. Poate, Appl. Phys. Lett. 65, 2305 (1994).
23. X. D. Pi, C. P. Burrows, and P. G. Coleman, Phys. Rev. Lett. 90, 155901 (2003).
24. R. R. Robinson and M. E. Law, Tech. Dig. - Int. Electron Devices Meet. 2002, 883.
25. M. Diebel and S. T. Dunham, Mater. Res. Soc. Symp. Proc. 717, C4.5.1 (2002).
26. S. Tian, Nucl. Instrum. Methods Phys. Res. B 215, 403 (2004).
27. M. D. Giles, J. Electrochem. Soc. 138, 1160 (1991).
28. A. Sultan, S. Banerjee, S. List, and V. McNeil, J. Appl. Phys. 83, 8046 (1998).
29. S.-P. Jeng, T.-P. Ma, R. Canteri, M. Anderle, and G. W. Rubloff, Appl. Phys. Lett. 61, 1310 (1992).
30. I-W. Wu, R. T. Fulks, and J. C. Mikkelsen Jr., J. Appl. Phys. 60, 2422 (1986).