Strained N-channel FinFETs with 25 nm gate length and silicon-carbon source/drain regions for performance enhancement

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2006, Pages 56-57

  Liow, Tsung Yang ^a,b   Tan, Kian Ming ^a   Lee, Rinus T P ^a   Du, Anyan ^b   Tung, Chih Hang ^b   Samudra, Ganesh S ^a   Yoo, Won Jong ^a   Balasubramanian, N ^b   Yeo, Yee Chia ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; FIELD EFFECT TRANSISTORS; SILICON NITRIDE; TENSILE STRESS;

ETCH-STOP LAYER (ESL); FIXED OFF-STATE CURRENT;

GATE DIELECTRICS;

EID: 41149178193     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. P. Verheyen et al., Symp. VLSI Tech., pp. 194-195, 2005.
2. K.-W. Ang et al., IEDM Tech. Dig., pp. 503-506, 2005.
3. S. Ito et al., IEDM Tech. Dig., pp. 247-250, 2000.
4. T. Ghani et al., IEDM Tech. Dig., pp. 978-980, 2003.