Tensile strained selective silicon carbon alloys for recessed source drain areas of devices

ECS Transactions

Volumn 3, Issue 7, 2006, Pages 187-196

  Bauer, M ^a   Weeks, D ^a   Zhang, Y ^a   Machkaoutsan, V ^b  

^a ASM AMERICA   (United States)

^b ASM BELGIUM   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; CRYSTAL LATTICES; DOPING (ADDITIVES); EPITAXIAL GROWTH; ETCHING; TENSILE STRENGTH;

CYCLICAL DEPOSITION ETCH (CDE); DEFECT FORMATION; ETCH RATE (ER); SILICON CARBON ALLOYS;

SILICON ALLOYS;

EID: 33846994763     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2355808     Document Type: Conference Paper

References (6)

1. M. Bauer, V. Machkaoutsan, C. Arena, presented at ISTDM 2006 in Princeton, will be published end of 2006 in Semiconductor Science and Technology
2. M. Bauer, S. Zollner, D. Theodore, M. Canonico, P. Tomasini, B.Y. Nguyen, C. Arena, Mat. Res. Soc. Symp., Vol. 864, 143 (2005);
3. R. Loo et al., Applied Surface Science 224, 63-67 (2004)
4. J.M. Hartmann et al., Semicond. Sci. Technol. 19, 593 (2004);
5. C. Arena, J. Italiano; P. Brabant, US Patent 6,998,305 B2
6. A. Fissel and W. Richter, Self-surfactant effects during MBE growth of Si on heavily doped Si(111):P (1999).