A novel ultrathin vertical channel NMOSFET with asymmetric fully overlapped LDD

IEEE Electron Device Letters

Volumn 24, Issue 2, 2003, Pages 84-86

  Liu, Haitao ^a   Xiong, Zhibin ^a   Sin, Johnny K O ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

Lightly doped drain (LDD); Solid phase epitaxy; Ultrathin channel; Vertical transistor

Indexed keywords

POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; THRESHOLD VOLTAGE;

LIGHTLY DOPED DRAIN (LDD);

MOSFET DEVICES;

EID: 0038732575     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2002.808153     Document Type: Article

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