Characteristics of high-k gate dielectric formed by the oxidation of sputtered Hf/Zr/Hf thin films on the Si substrate

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 22, Issue 4, 2004, Pages 1342-1346

  Kim, H D ^a   Roh, Y ^a   Lee, J E ^a   Kang, H B ^a   Yang, C W ^a   Lee, N E ^a  

^a Sungkyunkwan University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAP; EQUIVALENT OXIDE THICKNESS (EOT); HEAT FORMATION; LEAKAGE CURRENT;

ANNEALING; AUGER ELECTRON SPECTROSCOPY; CURRENT DENSITY; ELECTRIC POTENTIAL; HAFNIUM COMPOUNDS; MAGNETRON SPUTTERING; MICROELECTRONICS; MOSFET DEVICES; OXIDATION; PERMITTIVITY; SILICA; THERMODYNAMIC STABILITY; TITANIUM OXIDES; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

THIN FILMS;

EID: 4344610680     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1760751     Document Type: Conference Paper

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