An electrical characterization of a hetero-junction nanowire (NW) PN diode (n-GaN NW/p-Si) formed by dielectrophoresis alignment

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 36, Issue 2, 2007, Pages 194-198

  Lee, S Y ^a   Kim, T H ^a   Suh, D I ^a   Park, J E ^a   Kim, J H ^a   Youn, C J ^a   Ahn, B K ^a   Lee, S K ^a  

^a Chonbuk National University   (South Korea)

Author keywords

Contacts; GaN nanowires; Hetero junction p n diodes; Nanowire rectifiers

Indexed keywords

AC MACHINERY; GALLIUM NITRIDE; HETEROJUNCTIONS; OPTIMIZATION; SEMICONDUCTOR DIODES; SUBSTRATES;

GAN NANOWIRES; HETEROJUNCTION P-N DIODES; METAL CONTACTS; NANOWIRE RECTIFIERS;

NANOSTRUCTURED MATERIALS;

EID: 33846570387     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2006.10.019     Document Type: Article

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