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Volumn 89, Issue 4, 2006, Pages

Low-resistance Ohmic contacts for high-power GaN field-effect transistors obtained by selective area growth using plasma-assisted molecular beam epitaxy

(2) Hong, Seung Jae a Kim, Kyekyoon a

a University of Illinois at Urbana Champaign (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONTACT RESISTANCES; LOW-RESISTANCE OHMIC CONTACTS; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY (PAMBE); TI/AL/TI/AU METAL CONTACTS;

FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; RAPID THERMAL ANNEALING;

OHMIC CONTACTS;

EID: 33746592559 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.2234566 Document Type: Article

Times cited : (22)

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