Gate leakage and electrical performance of AlGaN/GaN MIS-type HFET with evaporated silicon oxide layer

Solid-State Electronics

Volumn 50, Issue 3, 2006, Pages 316-321

  Kikuta, D ^a   Ao, J P ^a   Ohno, Y ^a  

^a UNIVERSITY OF TOKUSHIMA   (Japan)

Author keywords

AlGaN GaN HFET; Frequency dispersion; Gate leak; MIS HFET; Transconductance

Indexed keywords

ELECTRIC RESISTANCE; ELECTRON BEAMS; HETEROJUNCTIONS; LEAKAGE CURRENTS; SILICON COMPOUNDS;

GATE BIAS; GATE LEAKAGE; METAL-INSULATOR-SEMICONDUCTOR (MIS); SILICON OXIDE LAYER;

FIELD EFFECT TRANSISTORS;

EID: 33646120813     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2005.12.021     Document Type: Article

References (13)

1. Keller S., Wu Y.F., Parish G., Zhang N., Xu J.J., Keller B.P., et al. Gallium nitride based high power heterojunction field effect transistors: Process development and present status at UCSB. IEEE Trans Electron Dev 48 (2001) 552-559
2. Ohno Y., and Kuzuhara M. Application of GaN-based heterojunction FETs for advanced wireless communication. IEEE Trans Electron Dev 48 (2001) 517-523
3. 3-based surface passivation and insulated gate structure for AlGaN/GaN HFETs. Phys Status Solidi C 2003;0:2380-4.
4. 3 high k dielectric. Phys Status Solidi C 2003;0:2351-4.
5. 3 as the gate oxide and surface passivation. Appl Phys Lett 82 (2003) 2530-2532
6. 4 gate insulator. Jpn J Appl Phys 42 (2003) 2278-2280
7. 4/AlGaN/GaN-metal-insulator-semiconductor heterostructure field-effect transistors. Appl Phys Lett 79 (2001) 2832-2834
8. 2 layers on AlGaN and AlGaN-GaN MOSHFET. IEEE Trans Electron Dev 50 (2003) 1748-1752
9. Asif Khan M., Hu X., Tarakji A., Sumin G., Yang J., Gaska R., et al. AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors on SiC substrates. Appl Phys Lett 77 (2000) 1339-1341
10. Yokoyama S., Dong D.W., DiMaria D.J., and Lai S.K. Characterization of plasma-enhanced chemically-vapor-deposited silicon-rich silicon dioxide/thermal silicon dioxide dielectric system. J Appl Phys 54 (1983) 7058-7065
11. Kikuta D, Takaki R, Matsuda J, Okada M, Wei1 X, Ao J-P, et al. Gate leakage reduction mechanism of AlGaN/GaN MIS-HFETs. In: Proc. international conference on solid state devices and materials (SSDM 2004), 2004. p. 266-7.
12. Ohno Y., Francis P., Nogome M., and Takahashi Y. Surface-states effects on GaAs FET electrical performance. IEEE Trans Electron Dev 46 (1999) 214-219
13. Ohno Y., and Goto N. Mechanism of electrostatic potential conduction in semi-insulating substrates. J Appl Phys 66 (1989) 1217-1221